Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

作者：Lin, Shih-Kai; Wu, Cheng-Hsien; Chen, Min-Chen; Chang, Ting-Chang; Lien, Chen-Hsin; Xu, You-Lin; Tseng, Yi-Ting; Wu, Pei-Yu; Tan, Yung-Fang; Sun, Li-Chuan; Zhang, Yong-Ci; Huang, Jen-Wei; Sze, Simon M.

来源：Journal of Physics D - Applied Physics, 2020, 53(39): 395101.

DOI：10.1088/1361-6463/ab92c5

• resistance random access memory (RRAM)
• reset behavior
• thermal conductivity
• oxygen ions
• switching region

This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.

• 单位
  中山大学; 中国科学院电工研究所; 清华大学