Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current

作者：Zhang, Rui; Yang, Yimin; Sun, Yabin^*; Liu, Ziyu; Liu, Yun; Li, Xiaojin; Shi, Yanling

来源：IEEE Transactions on Electron Devices, 2022, 69(12): 6569-6575.

DOI：10.1109/TED.2022.3216969

• Dual-doped source
• ON-current
• reconfigurable field effect transistor (RFET)
• thermionic emission

Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great attention in sub-nanometer devices. However, the poor current drivability limits its further application. In this article, a dual-doped Fin-RFET featuring a vertically stacked source/ drain has been proposed for the first time. The 3-D TCAD simulations demonstrate its improved ON-state saturated current (I-ON) by 8.71 times for n-FET and 10.35 times for p-FET, compared with conventional SB-RFETs. A comprehensive study of physical dimensions and materials in the proposed device is performed for device optimization, including control gate length (L-CG), polarity gate length (L-PG), fin height (H-Fin), and spacer dielectric constant (kappa(SP)). Various performance metrics have been taken for evaluation, such as ON-state current I-ON, OFF-state current IOFF, maximum of transconductance g(max), and cut-off frequency f(T). The results of our work offer a valuable reference for the rational design of the proposed device according to diverse customized functions.

• 单位
  复旦大学