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摘要
In this paper,the one-port and two-port measurement methods for millimeter wave Schottky diodes are developed,and the corresponding test structures are designed. The variation of cut-off frequency with parasitic resistance and zero bias intrinsic capacitance are analyzed. The equivalent circuit models of small signal and large signal are given. A commercial Schottky diode has been used to extract the small signal model parameters. The experimental results show that the S-parameters agree well under on and off bias condition.
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单位南通大学
