A UV to NIR Si Wavelength Sensor With Simple Geometry and Good Resolution

作者：Fu, Can; Lu, Chuan; Cheng, Hai-Yang; Zhang, Xiang; Zhang, Zhi-Xiang; Xiao, Yu-Tian; Lin, Di-Hua; Wang, Jiang; Hu, Ji-Gang; Wang, Zhi-Li; Wu, Di; Luo, Lin-Bao^*

来源：IEEE Transactions on Electron Devices, 2022, 69(5): 2457-2461.

DOI：10.1109/TED.2022.3161253

• Silicon
• Photoconductivity
• Photodetectors
• Electrodes
• Photonics
• Substrates
• Surface waves
• Distribution of photocurrent rate
• monotonic function
• Schottky junction
• Si wavelength sensor

In this work, a wavelength sensor that is capable of quantitatively distinguishing the wavelength in the range of ultraviolet (UV) to near-infrared (NIR) light (265-1050 nm) is presented. The wavelength sensor is fabricated by depositing two parallel Au electrodes on the two sides of a 200 mu m Si wafer. It is found that the as-formed two photodetectors display completely different optical properties. And then, the relationship between the photocurrent ratio of two photodetectors and incident wavelength can be described as a numerical function, through which the wavelength from 265 to 1050 nm can be precisely calculated. The unique operation mechanism of the Si wavelength sensor is unveiled by technology computer-aided design (TCAD) simulation. Remarkably, the wavelength sensor easily distinguishes the light with a wavelength difference of 1 nm, which is much better than previously reported devices based on the vertically stacked structures and charge collection narrowing mechanism.

• 单位
  郑州大学