摘要
Flexible inorganic GaN-based microscale light-emitting diodes (mu LEDs) show potential applications in wearable elec-tronics, biomedical engineering, and human-machine inter-faces. However, developing cost-effective products remains a challenge for flexible GaN-based mu LEDs. Here, a facile and stable method is proposed to fabricate flexible GaN-based mu LEDs from silicon substrates in an array-scale manner by wet etching. Circular and square mu LED arrays with a size and pitch of 500 mu m were fabricated and then transferred to a flexible acrylic/copper substrate. The as-fabricated flexible mu LEDs can maintain their structure intact while exhibiting a significant increase in external quantum efficiency. This Letter promotes the application of simple and low-cost flexi-ble mu LED devices, especially for virtual displays, wearables, and curvilinear displays.
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单位深圳信息职业技术学院; 中国科学院; 中国科学院研究生院