Novel Reconfigurable Field-Effect Transistor With Surrounded Source/Drain to Improve On-State Current

作者：Hu, Junfeng; Wang, Chao; Sun, Yabin^*; Liu, Ziyu^*; Li, Xiaojin; Shi, Yanling

来源：IEEE Transactions on Electron Devices, 2024, 71(1): 873-878.

DOI：10.1109/TED.2023.3335332

• Gate-all-around (GAA)
• nanosheet
• ON-state current
• reconfigurable field-effect transistor (RFET)
• Schottky junction

In this article, a novel reconfigurable field-effect transistor with surrounded source and drain (SSDRFET) is proposed to improve ON-state current. Compared to the conventional nanosheet reconfigurable transistor (NSRFET), the source and drain in SSDRFET are surrounded by a silicon channel and metal gate, and a higher tunneling probability and gate control ability are obtained. And, 5.52 and 4.92 times improvement of ON-state current ( I-ON ) separately exists for n-type and p-type SSDRFET. The performance under different geometry parameters, including source/drain diameter ( D-sd ), source/drain distance ( L-sd ), control gate (CG) length, and program gate (PG) length are investigated by using 3-D TCAD simulation. The results show that size parameters need to be selected carefully to get a better performance. Furthermore, the reduced gate capacitance and improved I-ON contribute to the more advantageous inverter based on SSDRFET, reducing about 70% of propagation delay. The underlying physical mechanisms are discussed in detail.

• 单位
  复旦大学