Low Dark-Current V2CTx/n-Si Van Der Waals Schottky Photodiode for Hadamard Single-Pixel Imaging

作者：Liu, Jiayang; Lu, Mengxue; Cui, Yinghao; Sun, Yangyang; Ma, Yuanming; Guan, Qingtian; Ma, Mengchao^*; Xu, Gaobin; Yu, Yongqiang

来源：IEEE Electron Device Letters, 2023, 44(2): 285-288.

DOI：10.1109/LED.2022.3227764

• vdW Schottky photodiode
• low dark-current
• single-pixel imaging
• sampling rate

Herein, we presented a novel low dark-current V2CTx/n-Si van der Waals (vdW) Schottky photodiode. The device exhibited the highest Schottky bar-rier height of 1.37 eV for Si-based Schottky barrier diodes (SBDs), yielding an ultra-low dark-current density approaching to 1.57 x 10(-12)A/cm(2) at zero bias voltage and similar to 1.25 x 10(-7)A/cm(2) at reverse bias of -2 V, which are smaller than most of previous Si-based SBDs. The performance of the presented photodiode was tested as a single-pixel detector in a Hadamard Single-pixel Imag-ing (HSI) system under self-powered operating model. Due to low dark-current together with a large linear dynamic range (similar to 77 dB), a high-quality 128 x 128-pixel image was achieved under even 25% sampling rate without additional filter processes for our device.