Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band

作者：Zha, Jiajia; Shi, Shuhui; Chaturvedi, Apoorva; Huang, Haoxin; Yang, Peng; Yao, Yao; Li, Siyuan; Xia, Yunpeng; Zhang, Zhuomin; Wang, Wei; Wang, Huide; Wang, Shaocong; Yuan, Zhen; Yang, Zhengbao; He, Qiyuan; Tai, Huiling; Teo, Edwin Hang Tong; Yu, Hongyu; Ho, Johnny C.; Wang, Zhongrui^*; Zhang, Hua^*; Tan, Chaoliang^*

来源：Advanced Materials, 2023, 35(20).

DOI：10.1002/adma.202211598

• 2D tellurium
• in-sensor reservoir computing
• optical communication band
• optoelectronic memory device
• van der Waals heterostructures

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.

• 单位
  南阳理工学院; 电子科技大学