Flexible N-Doped Graphene Electrodes Fabricated via Rapid Direct Hot Stamping for Microsupercapacitors

摘要

Motivated by the advancements in portable and wearable electronics, the rising necessity for microscale energy storage electronics has prompted extensive research on the efficient and cost-effective preparation of high-performance electrode materials. Herein, a facile fabrication method of N-doped graphene-based electrodes is demonstrated for in-plane microsupercapacitors (MSCs) on flexible textile. Our approach involves a one-step direct hot stamping of 10 s for efficient reduction of graphene oxide (GO) and simultaneously N doping into reduced GO (N-rGO). The degree of N doping is controlled by varying the concentrations of precursor chitosan (CS) in GO. Benefiting from the enhanced N doping, the N-rGO 15% electrodes prepared with a CS-to-GO mass ratio of 0.15 exhibit excellent volumetric capacitance of 42.2 F cm(-3), exceptional energy density of 3.01 mWh cm(-3), and a maximum power density of 31.57 mW cm(-3), along with the outstanding mechanical flexibility and cycle stability. Besides, serial integration of the MSCs interwoven on short sleeves was also performed to light a customized LED, suggesting its potential as a power source in wearable devices. Therefore, the proposed hot stamping strategy offers insights for the development of an integrated and multifunctional textile.

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