Improvement of PrIZO Thin Films by O2 Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors

作者：Zou, Wenxin; Liang, Zhihao; Fu, Xiao; Ning, Honglong^*; Zeng, Xuan; Fu, Yubin; Wang, Hongcheng; Luo, Cheng; Yao, Rihui^*; Peng, Junbiao

来源：IEEE Transactions on Electron Devices, 2023.

DOI：10.1109/TED.2023.3299896

• Amorphous oxide semiconductor (AOS)
• low-temperature annealing
• O-2 plasma treatment
• praseodymium-doped indium zinc oxide (PrIZO)
• thin-film transistors (TFT)

The amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are of great interest due to their high mobility, excellent homogeneity, and low processing temperature. With energy conservation and flexible electronics emerging, further reducing post-processing temperatures has become a primary concern. O(2 )plasma treatment has received much attention because it can supply oxygen atoms directly and enhance the performance of AOS thin films at low temperatures. In this study, we provide a combined post-treatment incorporating low-temperature annealing and O-2 plasma treatment to improve the performance of praseodymium-doped indium zinc oxide (PrIZO) thin films and TFTs. With the increase of O(2 )plasma treatment power, the density of PrIZO thin films first increases and then decreases, reaching a maximum of 6.3 g<middle dot>cm(-3 )at 40 W. With the increasing O(2 )plasma treatment power, the surface roughness of PrIZO thin films first decreases and then increases, achieving a minimum of 0.49 nm at 40 W. The optimized PrIZO TFT exhibits good electric performance with a mu (sat) of 17.9 cm(2)<middle dot>V-1<middle dot>s(-1), a subthreshold swing (SS) of 0.40 V<middle dot>dec(-1), a threshold voltage (V-TH) of -1.1 V, and an I-ON/I-OFF ratio of 7.4 x 10(7) ultimately. A novel combined posttreatment incorporating low-temperature annealing and O(2 )plasma treatment is proposed and proved promising.

• 单位
  东莞理工学院