A metal oxide TFT gate driver with a single negative power source employing a boosting module

摘要

This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a lower level than VSS. The proposed gate driver with 15 stages is fabricated through the IZO TFT process on a glass substrate to verify its function. The experiment results showed that the proposed gate driver can successfully output full-swing waveforms with resistive load R-L=2 k omega and capacitive load C-L=30 pF at the 16.7 and 66.7 kHz clock frequencies, and can also output as small as 3.2 mu s pulse width with little distortion, revealing good stability.

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