A metal oxide TFT gate driver with a single negative power source employing a boosting module

作者：Xu, Yan-Gang; Chen, Jun-Wei; Xu, Wen-Xing; Zhou, Lei; Wu, Wei-Jing^*; Zou, Jian-Hua; Xu, Miao; Wang, Lei; Peng, Jun-Biao

来源：Journal of Information Display, 2020, 21(1): 57-64.

DOI：10.1080/15980316.2019.1689190

• In-Zn-O thin-film transistors (IZO TFTs)
• gate driver
• bi-side
• single negative power source

This paper presents a new gate driver integrated by In-Zn-O thin-film transistors (IZO TFTs) with the etch stop layer (ESL) structure, in which only a single negative power source is used on account of a new boosting module. The boosting module is controlled only by the VIN signal for generating a lower level than VSS. The proposed gate driver with 15 stages is fabricated through the IZO TFT process on a glass substrate to verify its function. The experiment results showed that the proposed gate driver can successfully output full-swing waveforms with resistive load R-L=2 k omega and capacitive load C-L=30 pF at the 16.7 and 66.7 kHz clock frequencies, and can also output as small as 3.2 mu s pulse width with little distortion, revealing good stability.