Electrical Bistabilities of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded in a Poly 4-Vinyl Phenol Layer

作者:Xu Jia; Zhang Yong; Li Xiaochan; Zhang Tao; He Miao*; Qian Weining; Li Yun; Wen Xiaoxia; Chen Fangsheng; Ding Lizhen; Wang Bo
来源:Nanoscience and Nanotechnology Letters, 2013, 5(2): 147-150.
DOI:10.1166/nnl.2013.1510

摘要

A novel write-once-read-many-times (WORM) memory device, based on ITO nanoparticles and poly 4-vinyl phenol polymers core-cell hybrid and polystyrene, has been fabricated. The fabricated device showed high stable electrical bistability in the I-V characteristics and could be used to perform WORM memory functions. Compared with existing memory devices of the same type, the novel device possessed higher maximum ON/OFF current ratio of more than 10(4), longer data-retention time and better storage stability.

  • 单位
    华南师范大学

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