Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method

摘要

The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate nSnO2/p-Si heterojunction structure photoelectric device.The self-made chemical bath system is very cheap and convenient.The structural,optical and electrical properies of the SnO2 film were studied by XRD,SEM,XPS,PL,UV-VIS spectrophotometer and Hall effect measurement.The current-voltage (Ⅰ-Ⅴ) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail.SnO2/p-Si heterojunction shows a prominent visible-lightdriven photoelectrical performance under the low intensity light irradiation.Great photoelectric behavior was also obtained.

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