Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

摘要

The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crys-talline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1_x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

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