Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

作者：Guo, Shuang^*; Wang, Yunfeng; Zhang, Xiaolong; Wang, Bao; Zhang, Jinzhong^*

来源：Materials Letters, 2022, 329: 133199.

DOI：10.1016/j.matlet.2022.133199

• Crystal structure
• Phase transformation
• Nitrogen doped GeTe
• Optical band gap
• Localized states

The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crys-talline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1_x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

• 单位
  南阳理工学院