MoS 2 dual-gate MOSFET with atomic-layer-deposited Al 2O 3 as top-gate dielectric

作者：Liu H.^*; Ye P.D.

来源：IEEE Electron Device Letters, 2012, 33(4): 546-548.

DOI：10.1109/LED.2012.2184520

• Atomic layer deposition
• MoS 2
• MOSFET

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS 2) crystals and MoS 2 dual-gate n-channel MOSFETs with ALD Al 2O 3 as the gate dielectric. Our C-V study of MOSFET structures shows good interface between 2-D MoS 2 crystal and ALD Al 2O 3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V ds = 2V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm -2V?s. The highest current on/off ratio is over 10 8.