科研之友
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摘要
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers, adsorption/desorption principle of hydrogen and modulation effects of Schottky barrier height. Use Silvaco TCAD, the semiconductor simulation software, to analyze SBDs with trench-insulator layer and to compute current-voltage characteristics at different temperature, hydrogen concentration and trench width under forward bias. The temperature and hydrogen concentration affect the I-V characteristics of the devices by changing the Schottky barrier height. Compared with normal metal-silicon carbide and metal-insulator-silicon carbide devices at 573 K in terms of on-off voltage, current resolution, response speed, and stability, the trench-insulator hydrogen sensor showed good performance. Relationship between device characteristics and trench width was researched using the above model. Trench width has an opposite effect on sensor resolution and sensitivity.
