Effect of copper doping on the crystallization behavior of TiSbTe for fast-speed phase change memory

摘要

In this study, Ti-Sb-Te (TST) alloy doped with Cu has been proposed to enhance the phase change and electrical properties of TST. The formation of Cu-Te bond was suggest to be responsible for the improved thermal stability of the Cu-0.28(Ti0.09Sb0.38Te0.53)(0.72) (Cu0.28TST) film. Cu0.28TST-based phase change memory cell can be triggered by a 5 ns electric pulse. Such fast speed was ascribed to its growth-dominated crystallization mechanism and the precipitation of Sb in the crystallization process. Furthermore, an endurance cycles up to 10(5) could be achieved in the memory cell.

关键词