Effect of copper doping on the crystallization behavior of TiSbTe for fast-speed phase change memory

作者：Zheng, Qianqian; Guo, Tianqi; Chen, Liangliang; Song, Sannian; Zhang, Xin; Yu, Wenlei; Zhu, Xiuwei; Shao, Hehong; Zheng, Wanting; Zhan, Juan

来源：Materials Letters, 2019, 241(Apr.15): 148-151.

DOI：10.1016/j.matlet.2019.01.065

• Nanocomposite
• Thin film
• Rapid transition
• Thermal stability

In this study, Ti-Sb-Te (TST) alloy doped with Cu has been proposed to enhance the phase change and electrical properties of TST. The formation of Cu-Te bond was suggest to be responsible for the improved thermal stability of the Cu-0.28(Ti0.09Sb0.38Te0.53)(0.72) (Cu0.28TST) film. Cu0.28TST-based phase change memory cell can be triggered by a 5 ns electric pulse. Such fast speed was ascribed to its growth-dominated crystallization mechanism and the precipitation of Sb in the crystallization process. Furthermore, an endurance cycles up to 10(5) could be achieved in the memory cell.