In-situ Raman scattering study of nitrogen doped GeTe phase-change films

摘要

The N doping effect on the phase-change mechanism, as well as the chemical bonds evolution during crystallization process of nitrogen (N) doped GeTe (Nx(GeTe)1_x) have been investigated by in situ temperaturedependent Raman scattering experiments. The phase-change mechanism of Nx(GeTe)1_x and N doping effect have been discussed in detail by analysing the transformation of Raman vibration modes between amorphous and crystalline structures. The fraction of the tetrahedral species changes in such a way, namely Te-rich tetrahedra are being formed at the cost of Ge-rich tetrahedra during the phase-change process. Besides, the aforementioned structural rearrangements have taken place even in amorphous phase (below crystallization temperatures).

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