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A CMOS low-noise active mixer with enhanced linearity and isolation by exploiting capacitive neutralization technique

Guo, Benqing*; Wang, Huifen; Chen, Jun; Deilamsalehi, Mohammad Mehdi
Science Citation Index Expanded
电子科技大学; 河南工业大学; i

摘要

In this paper, a broadband complementary metal-oxide-semiconductor (CMOS) active down-conversion mixer is presented. Specifically, a capacitor cross-coupled (CCC) transconductor serves as the input stage to reduce noise figure of the mixer while providing wideband input matching. Moreover, a capacitive neutralization technique is used to compensate the source-drain parasitic of input stage and boost loop gain of the transconductor, resulting in improved isolation and linearity. The current-reuse technique applied to the developed transconductor by stacked nMOS/pMOS architecture efficiently saves power consumption of the circuit. Implemented in the TSMC 28-nm CMOS process, post-simulations show that the proposed mixer provides a maximal conversion gain of 11.4 dB and an NF of 3.9-4.7 dB across RF input frequency range of 2-9.6 GHz. The average IIP3 of 5 dBm are obtained while the mixer core consumes 6.2 mW from a 1 V supply.

关键词

CMOS mixer noise figure (NF) capacitor neutralization port isolation complementary configuration