A CMOS low-noise active mixer with enhanced linearity and isolation by exploiting capacitive neutralization technique

作者：Guo, Benqing^*; Wang, Huifen; Chen, Jun; Deilamsalehi, Mohammad Mehdi

来源：Modern Physics Letters B, 2019, 33(18): 1950204.

DOI：10.1142/S021798491950204X

• CMOS mixer
• noise figure (NF)
• capacitor neutralization
• port isolation
• complementary configuration

In this paper, a broadband complementary metal-oxide-semiconductor (CMOS) active down-conversion mixer is presented. Specifically, a capacitor cross-coupled (CCC) transconductor serves as the input stage to reduce noise figure of the mixer while providing wideband input matching. Moreover, a capacitive neutralization technique is used to compensate the source-drain parasitic of input stage and boost loop gain of the transconductor, resulting in improved isolation and linearity. The current-reuse technique applied to the developed transconductor by stacked nMOS/pMOS architecture efficiently saves power consumption of the circuit. Implemented in the TSMC 28-nm CMOS process, post-simulations show that the proposed mixer provides a maximal conversion gain of 11.4 dB and an NF of 3.9-4.7 dB across RF input frequency range of 2-9.6 GHz. The average IIP3 of 5 dBm are obtained while the mixer core consumes 6.2 mW from a 1 V supply.

• 单位
  河南工业大学; i; 电子科技大学