Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

作者：Ning, Honglong; Zeng, Xuan; Zhang, Hongke; Zhang, Xu; Yao, Rihui^*; Liu, Xianzhe; Luo, Dongxiang; Xu, Zhuohui; Ye, Qiannan; Peng, Junbiao

来源：Membranes, 2022, 12(1): 29.

DOI：10.3390/membranes12010029

• thin film transistors
• flexible
• fully transparent
• oxide

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

• 单位
  广州大学; 玉林师范学院; 广东工业大学