Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

摘要

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (mu(sat)) of 7.9 cm(2)/V center dot s, an I-on/I-off ratio of 4.58 x 10(6), a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

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