Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO2 Capacitors

作者：Zhang, Yueyuan; Peng, Yue^*; Liu, Fenning; Li, Kaixuan; Zhong, Ni; Liu, Yan^*; Hao, Yue; Han, Genquan

来源：IEEE Transactions on Electron Devices, 2023, 70(7): 3788-3793.

DOI：10.1109/TED.2023.3279064

• Charge injection
• endurance
• ferroelectric (FE)
• Hf0.5Zr0.5O2 (HZO)
• interface-roughness

In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf0.5Zr0.5O2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization (P-r) than that with a flat interface structure. However, although the device with the rough interface can achieve an improved P-r value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps (D-it) and leakage current (J(leakage)) as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO2-based FE memory for advanced node technology.

• 单位
  y; 西安电子科技大学