LDAVPM: A Latch Design and Algorithm-Based Verification Protected Against Multiple-Node-Upsets in Harsh Radiation Environments

摘要

In deep nano-scale and high-integration CMOS technologies, storage circuits have become increasingly sensitive to charge-sharing-induced multiple-node-upsets (MNUs) that include double, triple, and quadruple node-upsets. Currently, verifications for error recovery of existing latches highly rely on EDA tools with complex error-injection combinations. In this article, a latch design protected against MNUs in the harsh radiation as well as an algorithm-based verification process is proposed. Due to the constructed redundant feedback loops, the latch can completely recover from any MNU. Algorithm-based verification and simulations both demonstrate the MNU recovery of the proposed latch. Simulation results demonstrate the low area overhead of the proposed latch compared with the only one existing of the same type.

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