A ferroelectric fin diode for robust non-volatile memory

作者：Feng, Guangdi; Zhu, Qiuxiang; Liu, Xuefeng; Chen, Luqiu; Zhao, Xiaoming; Liu, Jianquan; Xiong, Shaobing; Shan, Kexiang; Yang, Zhenzhong; Bao, Qinye; Yue, Fangyu; Peng, Hui; Huang, Rong; Tang, Xiaodong; Jiang, Jie; Tang, Wei; Guo, Xiaojun; Wang, Jianlu; Jiang, Anquan; Dkhil, Brahim; Tian, Bobo^*; Chu, Junhao; Duan, Chungang

来源：Nature Communications, 2024, 15(1): 513.

DOI：10.1038/s41467-024-44759-5

• TRANSITION

Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 10(10) cycles, an ON/OFF ratio of similar to 10(2), a feature size of 30 nm, an operating energy of similar to 20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of similar to 10(4) permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.

• 单位
  复旦大学; 上海交通大学