Highly efficient and stable hybrid quantum-dot light-emitting field-effect transistors

作者：He, Penghui; Lan, Linfeng^*; Deng, Caihao; Wang, Jian; Peng, Junbiao; Cao, Yong

来源：Materials Horizons, 2020, 7(9): 2439-2449.

DOI：10.1039/d0mh00951b

• HIGH-PERFORMANCE
• AUGER RECOMBINATION
• DIODES
• BRIGHTNESS
• LAYER
• ZONE

Light-emitting field-effect transistors (LETs) have drawn much attention for their special capability of combining switching and electroluminescence capacity in a single device. Herein, we report a colour-saturated, high-efficiency red quantum-dot hybrid light-emitting field-effect transistor (QD-HLET) with a solution-processed InScO/ZnO-nanoparticle heterojunction channel layer and a deep-level organic hole transport layer (HLT). The red QD-HLET exhibits a field-effect mobility of 3.1 cm(2)V(-1)s(-1)with an on/off ratio of similar to 10(5), a maximum brightness of 145 000 cd m(-2)with a peak external quantum efficiency (EQE) of 22.8% and low efficiency roll-off (an EQE of 17.0% at a brightness of 100 000 cd m(-2)). In addition, the operating stability of the HLET is investigated by monitoring the time-dependent change in the brightness of the QD-HLET under variousV(GS), while an operational lifetime of more than 153 000 hours at 100 cd m(-2)is achieved. A comprehensive study on the electrical and optical characteristics of the red QD-HLET under different operation modes is conducted, and an operation model is proposed.