Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

作者：Bugiel, Szymon^*; Dorokhov, Andrei; Aresti, Mauro; Baudot, Jerome; Beole, Stefania; Besson, Auguste; Bugiel, Roma; Cecconi, Leonardo; Colledani, Claude; Deng, Wenjing; Di Mauro, Antonello; El Bitar, Ziad; Goffe, Mathieu; Hasenbichler, Jan; Hong, Geun Hee; Hu-Guo, Christine; Jaaskelainen, Kimmo; Kluge, Alex; Mager, Magnus; Marras, Davide; de Melo, Joao; Munker, Magdalena; Pham, Hung; Piro, Francesco; Reidt, Felix; Rinella, Gianluca Aglieri; Russo, Roberto; Sarritzu, Valerio

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2022, 1040: 167213.

DOI：10.1016/j.nima.2022.167213

• Monolithic CMOS pixel sensors
• 65nm TPSCo

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 x 32 square analogue-output pixels with a pitch of 15 mu m. Different pixel types explore several sensing node geometries and amplification schemes, which allows for various biasing voltage of the detection layer and hence depletion conditions and electric field shaping. Laboratory tests conducted with a Fe-55 source demonstrated that the CE-65 sensors reach equivalent noise charge in the 15 to 25 e(-) range and excellent charge collection efficiencies. Charge sharing is substantial for standard diodes, but can be largely suppressed by modifying their design. Depletion of the thin sensitive layer saturates at a reverse diode bias of about 5 V.