High-Performance and Flexible Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistor With All Copper Alloy Electrodes

作者：Lu, Kuankuan; Zhang, Jianhua; Guo, Dong; Xiang, Jingyu; Lin, Zimian; Zhang, Xinyi; Wang, Tingting; Ning, Honglong^*; Yao, Rihui; Peng, Junbiao

来源：IEEE Electron Device Letters, 2020, 41(3): 417-420.

DOI：10.1109/LED.2020.2967408

• Copper electrode
• thin film transistors
• NdIZO
• PI substrate
• flexible

In this paper, we examine the possibility of using homogeneous and monolayer Cu-0.08 wt. % Cr-0.05 wt. % Zr (CuCrZr) ternary alloy film as both bottom-gate and source/drain (S/D) electrodes for flexible neodymium-doped indium-zinc-oxide (NdIZO) thin-film transistor (TFT) applications. Under the optimized sputtering parameters (250 W & 1.4 mtorr) and annealing process (380 degrees C & text4 h, N-2 atmosphere), the resistivity of the alloy film is as low as $2.47 mu \cdot $ cm (300 nm) and the adhesion strength to polyimide (PI) substrate reaches 4 B-5 B level, which is competent for high-performance flexible display. As a result, the flexible NdIZO-TFTs with all-CuCrZr electrodes operate in enhancement mode with both high electrical performance ( $\mu _{{\text {FE}}}$ of 32.1 cm(2)/ $\text{V}\cdot \text{s}$ , I-on/I-off of 10(7), V-th of 0.42 V, SS of 0.16 V/decade, RC-norm of $84.5\Omega \cdot $ cm and V-th of -0.28 V/+2.46 V under +/- 1MV/cm positive/negative bias stress (NBS/PBS) for 5400 s) and good mechanical flexible performance (V-th of only -0.32 V/-0.29 V under r-2.5mm-static and 10K-times-dynamic bending test).

• 单位
  上海大学