First-principles identification of VI + Cui defect cluster in cuprous iodide: origin of red light photoluminescence

作者：Liu, Dingrong; Cai, Zenghua; Wu, Yu-Ning^*; Chen, Shiyou^*

来源：Nanotechnology, 2022, 33(19): 195203.

DOI：10.1088/1361-6528/ac4aa5

• first-principles calculation
• transparent semiconductor
• cuprous iodide
• defect cluster
• photoluminescence
• carrier density

The gamma-phase cuprous iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavelength (410-430 nm) emission, which is well attributed to the electronic transitions at Cu vacancy, whereas the other long wavelength emission (680-720 nm) has not been fully understood. In this paper, through first-principles simulations, we investigate the formation energies and emission line shapes for various defects, and discover that the intrinsic point defect cluster V-I+Cui(2+) is the source of the long wavelength emission. Our finding is further supported by the prediction that the defect concentration decreases dramatically as the chemical condition changes from Cu-rich to I-rich, explaining the significant reduction in the red light emission if CuI is annealed in abundant I environment.

• 单位
  复旦大学