Optimisation of Sb2S3 thin-film solar cells via Sb2Se3 post-treatment

作者：Wang, Rui; Qin, Deyang; Ding, Xiaolei; Zhang, Qipei; Wang, Youyang; Pan, Yanlin; Weng, Guoen; Hu, Xiaobo^*; Tao, Jiahua; Chu, Junhao; Akiyama, Hidefumi; Chen, Shaoqiang^*

来源：Journal of Power Sources, 2023, 556: 232451.

DOI：10.1016/j.jpowsour.2022.232451

• Sb 2 Se 3 post -Treatment
• Deep -level transient spectroscopy (DLTS)
• Vapour transport deposition (VTD)
• Solar cells

In this work, Sb2S3 thin films are prepared by Vapour Transport Deposition (VTD) and solar cell devices with the superstrate structure of ITO/CdS/Sb2S3/Au are fabricated. In particular, an effective Sb2Se3 post-treatment method is developed for the optimisation of Sb2S3 thin-film cells without modifying the Sb2S3 main structure and phase. A device efficiency of 4.02% is reached by optimising the time of Sb2Se3 post-treatment with the augment of short-circuit current density (Jsc) and fill factor (FF). Comparative studies of the electrical properties, carrier transport, and carrier recombination of cells with and without Sb2Se3 post-treatment are carried out in detail, including current density versus voltage (J-V) measurements under both light and dark conditions, energy-dispersive X-ray spectroscopy (EDX), deep-level transient spectroscopy (DLTS), and open-circuit voltage measurements at various temperatures and light intensity levels. The best-performing cells are Sb2Se3 post -treated cells, which have the least amount of parallel current pathways, the smallest amount of trap-assisted recombination, longer carrier lifetimes, and a benign distribution of elements with S-rich features. This study provides a unique strategy for realising the greater potential of chalcogenide thin-film solar cells.

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