Organic single crystals of cyano-substituted p-phenylene vinylene derivatives as transistors with low surface trap density

摘要

We obtained two high-quality lamellar crystals of cayno-substituted p-phenylene vinylene derivatives and fabricated their transistors. The transistors demonstrated hysteresis-free, low subthreshold swing values of 0.15 and 0.10 V dec(-1), and high mobilities of 0.56 and 2.73 cm(2) V-1 s(-1), respectively. More importantly, the low defect density of 1 per 9.22 x 10(3) and 1.82 x 10(4) molecules, respectively, confirmed their high crystal quality.

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