Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection

作者：Li, Huanran; You, Su; Yu, Yongqiang; Ma, Lin; Zhang, Li; Yang, Qing^*

来源：Nano Research, 2023, 16(2): 3304-3311.

DOI：10.1007/s12274-022-4931-0

• Ga/GaSb nanostructure
• metal-semiconductor heterojunction
• narrow bandgap semiconductor
• solution-liquid-solid (SLS) growth model
• GaSb/Si heterojunction photodetector
• hybrid nanostructured photodetector
• infrared photodetection

Gallium antimonide (GaSb)-based nanostructures have been reported via various vapor-phase synthetic routes while there is not a report on the growth of GaSb nanostructures via a complete one-step solution-phase synthetic strategy. Herein we report the design and synthesis of tadpole-like Ga/GaSb nanostructures by a one-step solution-phase synthetic route typically from the precursors of commercial triphenyl antimony (Sb(Ph)(3)) and trimethylaminogallium (Ga(NMe2)(3)) at 260 degrees C in 1-octadecene. The GaSb nanocrystals are grown based on a solution-liquid-solid (SLS) mechanism with zinc blende phase, and their size and shape can be controlled in the procedures via manipulating the reaction conditions. Meanwhile, the tadpole-like Ga/GaSb nanostructures can be applied for the fabrication of a GaSb/Si nanostructured heterojunction-like photodetector over silicon wafer, which demonstrates excellent photoresponse and detection performances from wavelength of 405 to 1,064 nm with high photoresponding rate. Typically, the photodetector exhibits a high responsivity of 18.9 A.W-1, a superior detectivity of 1.1 x 10(13) Jones, and an ultrafast response speed of 44 ns. The present work provides a new strategy to group III-V antimonide-based semiconducting nanostructures that are capable for the fabrication of photodetector with broadband, high-detectivity, and high-speed photodetecting performances.