Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device

作者：Thien, Gregory Soon How^*; Talik, Noor Azrina; Yap, Boon Kar; Nakajima, Hideki; Tunmee, Sarayut; Chanlek, Narong; Goh, Boon Tong^*

来源：Ceramics International, 2020, 46(18): 29041-29051.

DOI：10.1016/j.ceramint.2020.08.075

• Lead halide perovskite
• TiO2
• Resistive switching
• Charge trapping
• Filamentary conduction

Reducing pinholes formation and enhancing surface coverage of hybrid organic-inorganic halide perovskite (MAPbI(3)) film is critical in most application such as photovoltaics and memory device. These applications usually incorporate Titanium Dioxide (TiO2) which is widely used to improve carrier injection as well as film morphology. Taking into account the fabrication and preparation cost, rather than forming a bilayer device, this work demonstrates the design of a facile two-step coating method in producing higher surface quality of single layer MAPbI(3) modified with the addition of TiO2 nanoparticles. The study of this novel MAPbI(3)-TiO2 compound reveals an enhanced movement of iodide vacancies towards the ITO interfaces while considering the effect of grain size and film uniformity. Hence, the Resistive Random Access Memory (ReRAM) devices employing the MAPbI(3)-TiO2 compound shows to aid in improving V-SET and V-RESET voltage values in which molar ratio of Pb to Ti of 5% in MAPbI(3)-TiO2 layer shows improved V-SET and V-RESET values of 3.6 V and -1.1 V. This study is believed to aid as a forefront in understanding the applicability of a single layer MAPbI(3)-TiO2 in multiple applications.