Intrinsic ferromagnetism and anomalous Hall effect in GaN thin film by Mn delta doping

摘要

Compound semiconductors doped with magnetically active transition metals (TM) are actively pursued for semiconductor spintronics. Herein we report that delta doping (delta-doping) has been used to incorporate manganese (Mn) into the gallium nitride (GaN) matrix resulting in phase pure highly crystalline heteroepitaxial thin films of (Ga,Mn)N on c-plane sapphire (Al2O3) by plasma-assisted molecular beam epitaxy. Magnetotransport measurements reveal the anomalous Hall effect (AHE) while magnetic measurements show the existence of ferromagnetic ordering. Density functional theory calculations show that d-doping of Mn atom enables exchange interactions between the Mn 3d states and N 2p states thereby resulting in spin polarized holes in the valence band giving rise to observed AHE and ferromagnetism. This work opens new avenues for incorporating spin polarized carriers in III-nitrides based semiconductors by creating magnetically active Mn layers in heterostructures for spintronics applications.

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