Interface of Sn-doped AgAlTe2 and LiInTe2: A theoretical model of tandem intermediate band absorber

作者：Huang, Dan^*; Ding, Lijie; Xue, Yang; Guo, Jin; Zhao, Yu-Jun^*; Persson, Clas^*

来源：Applied Physics Letters, 2021, 118(4): 043901.

DOI：10.1063/5.0034852

Designing a new absorber to overcome the Shockley-Queisser limit for single-junction solar cells is of great importance for solar cell advancements. Here, a theoretical model of tandem intermediate band absorber is proposed based on the interface of Sn-doped AgAlTe2 and LiInTe2. Sn-doped AgAlTe2 and LiInTe2 are imminent to produce ideal heterojunctions as they possess similar lattice constants and the type-II band offset, providing an approach to overcome the Shockley-Queisser limit.

• 单位
  广西大学