Interface of Sn-doped AgAlTe2 and LiInTe2: A theoretical model of tandem intermediate band absorber

摘要

Designing a new absorber to overcome the Shockley-Queisser limit for single-junction solar cells is of great importance for solar cell advancements. Here, a theoretical model of tandem intermediate band absorber is proposed based on the interface of Sn-doped AgAlTe2 and LiInTe2. Sn-doped AgAlTe2 and LiInTe2 are imminent to produce ideal heterojunctions as they possess similar lattice constants and the type-II band offset, providing an approach to overcome the Shockley-Queisser limit.

关键词