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DNA-modified silicon nanocrystals studied by X-ray luminescence and X-ray absorption spectroscopies: Observation of a strong infra-red luminescence band

Coxon P R*; Newman M; Hunt M R C; O'; Farrell N; Horrocks B R; Poolton N R J; Siller L
Engineering Village
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摘要

Silicon nanocrystals (SiNCs) modified with 18-mer DNA oligonucleotides have been studied by X-ray excited optical luminescence (XEOL) and X-ray absorption spectroscopy (XAS) in photoluminescence yield (PLY) and total electron yield (TEY) modes. Luminescence spectra from the DNA-modified SiNCs under X-ray excitation display distinct differences from simple alkyl terminated SiNCs. The DNA-modified SiNCs show strong luminescence at 540 ± 10nm under vacuum ultraviolet excitation which is assigned to nitrogen 1s - σ* transitions within the DNA bases. Under excitation at 130eV the PLY spectra from the same samples show the native nanocrystal ultraviolet emission band is suppressed, and the strongest emission peak is red shifted from 430 ± 10nm to 489 ± 10nm which we attribute to base nitrogen 1s transitions. In addition, a strong emission band in the infrared region at 815 ± 10nm is observed. This clearly resolved strong IR band from the DNA-modified SiNCs may provide a useful luminescence signature in cell-labeling techniques and open up a range of applications for invivo assays.

关键词

DNA basis DNA oligonucleotides Emission bands Emission peaks In-vivo Infrared regions IR bands Luminescence band Luminescence signatures Luminescence spectrum Red-shifted Silicon nanocrystals Strong luminescence Total electron yield Ultraviolet emission Vacuum ultraviolet excitation X ray luminescence X-ray excitation X-ray excited optical luminescence