HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

作者：Peng, Yue; Xiao, Wenwu; Liu, Yan^*; Jin, Chengji; Deng, Xinran; Zhang, Yueyuan; Liu, Fenning; Zheng, Yunzhe; Cheng, Yan; Chen, Bing^*; Yu, Xiao; Hao, Yue; Han, Genquan

来源：IEEE Electron Device Letters, 2022, 43(2): 216-219.

DOI：10.1109/LED.2021.3135961

• HZO
• HfO2
• ZrO2
• superlattice
• ferroelectric
• trapping
• detrapping
• oxygen vacancy

HfO2-ZrO2 superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved endurance performance and higher fatigue recovery capability compared to the HfZrOx (HZO) device. During the cycling of polarization (P) vs. voltage (V) loops, the SL metal-FE-metal (MFM) capacitor exhibits the higher P and the lower leakage current over the HZO device indicating the lower defect density in SL. The SL capacitor achieves an endurance of 5 x 10(12) cycles, which is three orders of magnitude higher than the HZO device. The P fatigue of the SL capacitor can be fully recovered through a similar to 30 s break, and that of HZO is only partially recovered utilizing the higher field cycling. This is because the trapping/detrapping process significantly decreases in HfO2-ZrO2 SL over HZO capacitor by the reduced defect density. These results prove that the HfO2-ZrO2 SL is a promising technology for endurance unlimited FE random access memory.

• 单位
  浙江大学; y; 西安电子科技大学