Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

作者：Li, Shanjie; He, Zhiyuan^*; Gao, Rui; Chen, Yiqiang^*; Chen, Yuan; Liu, Chang; Huang, Yun; Li, Guoqiang

来源：IEEE Transactions on Electron Devices, 2021, 68(1): 443-446.

DOI：10.1109/TED.2020.3039766

• High-temperature reverse bias (HTRB)
• hole emission
• negative bias temperature instability (NBTI)
• p-GaN
• threshold voltage (V-th)

In this article, we experimentally investigate the degradation mechanisms of GaN high-electronmobility transistors (HEMTs) with p-type gate during long-term high-temperature reverse bias (HTRB) stress and negative bias temperature instability (NBTI) stress. Based on a number of stress/recovery experiments, we demonstrate that HTRB stress could lead to hole emission in the p-GaN layer, making threshold voltage (V-th) positively shift, while NBTI stress could result in detrapping at the AlGaN/GaN interface or the AlGaN layer and make V-th negatively shift. It is also found that the temperature rise can suppress the positive V-th shift and accelerate its recovery process in HTRB experiments.

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