MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices

作者：Wang Geng; Wang Lu; Chen Hong; Wang Wenxin; Shi Zhenwu; Chen Yulong; He Miao^*; Lu Pingyuan; Qian Weining

来源：Chinese Science Bulletin, 2014, 59(20): 2383-2386.

DOI：10.1007/s11434-014-0424-1

• InAs/GaSb superlatices
• High absorption
• Molecular beam epitaxy

Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs (8 MLs)/GaSb (8 MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 A mu m at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8 MLs)/GaSb (8 MLs) SLs have better crystalline quality than that of the InAs (6 MLs)/GaSb (3 MLs) SLs. However, compared with infrared absorption in the 2.5-4.3 A mu m range, the optical absorption of InAs (6 MLs)/GaSb (3 MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.

• 单位
  中国科学院; 华南师范大学