Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

Authors：Chen Yen Wen; Tai Tse Yu; Hsu Chen Pin; Sarangadharan Indu; Pulikkathodi Anil Kumar; Wang Hsin Li; Sukesan Revathi; Lee Geng Yen; Chyi Jen Inn; Chen Chih Chen; Lee Gwo Bin; Wang Yu Lin^*

Source：Sensors and Actuators, B: Chemical , 2018, 271: 110-117.

DOI：10.1016/j.snb.2018.05.119

• AlGaN/GaN HEMT
• Electrical double layer
• Sensitivity and specificity of DNA detection

In this research, we have realized an electrical double layer (EDL) gated high electron mobility transistor (HEMT) as DNA sensor. The sensing area on the gate electrode which is separated from the transistor channel is immobilized with probe DNA to capture target DNA from physiological salt environment. The detection limit of the sensor can be as low as 1 fM with very high sensitivity. The specificity of the DNA sensor is also demonstrated by controlling the hybridization temperature. By choosing the hybridization temperature slightly lower than the melting temperature of the well-matched sequence, the binding ratio can be controlled between the fully-matched and mismatched one. The sensor has demonstrated specificity, with the ability to achieve single base mismatch resolution. The sensor has the potential for rapid DNA sensing applications in cells, biomarkers and viruses.

• Institution
  清华大学