An enhancement-mode AlInN/GaN HEMTs combining intrinsic GaN cap layer and AlGaN back barrier layer

作者：Zhang, Cong; Yao, Ruohe^*

来源：Solid State Communications, 2023, 366: 115150.

DOI：10.1016/j.ssc.2023.115150

• Back barrier layer
• Cap layer
• Enhancement -mode (E-mode) device
• High electron mobility transistors (HEMTs)

An AlInN/GaN high electron mobility transistors (HEMTs) is designed to deplete the two-dimensional electron gas (2DEG) under the gate by using the polarization modulation effect of the GaN cap layer and the AlGaN back barrier layer. Through theoretical analysis, the thin AlInN barrier layer can increase the gate control capability and improve the transconductance of the device. On the other hand, the intrinsic GaN cap layer without doping can reduce the complexity of the fabrication. The threshold voltage (VTH) of the device increases with the in-crease of the thickness of the cap layer and the Al component of the back barrier layer. Increasing Al component in the back barrier can improve the device performance. This structure has the advantages of simplified adjustment of the threshold voltage, high current density, simply fabrication process and to provide a better design solution for HEMTs in power applications.