N-type conjugated polyelectrolyte enabled by in situ self-doping during aldol condensation

摘要

Self-doped conjugated polyelectrolytes (CPEs) exhibit appealing application prospects in organic electronics, and their properties can be widely tuned via doping. Nevertheless, the development of high-performance n-type self-doped CPEs lags far behind that for mature p-doped CPEs. It is of great significance but still challenging to develop facile syntheses and doping pathways for n-type self-doped conjugated polymers. Herein, a transition metal-free aldol condensation polymerization accompanied by an in situ n-doping process was explored to prepare an n-type CPE. The obtained CPE, PIIGBDV-N, exhibited strong doping-induced polaron absorption in the near-infrared region, high conductivity and great ambient stability. Organic solar cell (OSC) devices using PIIGBDV-N as the electron transport layer (ETL) exhibited excellent photovoltaic conversion efficiency (PCE) and good ETL thickness tolerance. This study sheds light on facile and efficient syntheses and doping methods for preparing n-type conjugated polymers with promise for application in organic electronics.

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