High second-order nonlinearity by p-n junction formation in plasma enhanced chemical vapor deposition deposited hydrogenated amorphous silicon thin films

摘要

High second-order nonlinearity as high as 115.9 pm/V was obtained through the formation of p-n junction using plasma-enhanced CVD deposition of hydrogenated amorphous silicon thin films on fused silica substrate without additional electrical poling to induce second harmonic generation in the isotropic amorphous materials. No second harmonic generation was observed for films deposited with only p or n type amorphous silicon. The built-in electrostatic field E-dc of p-n junction was observed by measuring the I-V curve of the designed p-i-n layered films, and was found to be the main source of high second-order nonlinearity.

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