Prototype of single-event effect localization system with CMOS pixel sensor

摘要

The single-event effect (SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor (CMOS) pixel sensor, i.e., Topmetal-M, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou (HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7 degrees, and the angular resolution was 0.6 degrees. The prototype localized heavy ions with a position resolution of 3.4 lm.

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