摘要
Defects are common in inorganic materials and not static upon annealing of the heat effect. Antithermal quenching of luminescence in phosphors may be ascribed to the migration of defects and/or ions, which has not been well-studied. Herein, we investigate the antithermal quenching mechanism of upconversion luminescence in Sc2(MoO4)3: 9%Yb1%Er with negative thermal expansion via a fresh perspective on thermodynamics and kinetics, concerning the thermally activated movement of defects and/or ions. Our results reveal a second-order phase transition taking place at similar to 573 K induced by oxide-ion migration. The resulting variation of the thermodynamics and kinetics of the host lattice owing to the thermally induced oxide-ion movement contributes to a more suppressed nonradiative decay rate. The dynamic defects no longer act as quenching centers with regard to the time scale during which they stay nearby the Yb3+/Er3+ site in our proposed model. This research opens an avenue for understanding the antithermal quenching mechanism of luminescence via thermodynamics and kinetics.
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单位桂林理工大学