Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors

作者：Li, Yang^*; Pan, Yelong; Zhang, Cheng^*; Shi, Zhiming; Ma, Chunlan; Ling, Songtao; Teng, Min; Zhang, Qijian^*; Jiang, Yucheng; Zhao, Run; Zhang, Qichun^*

来源：ACS applied materials & interfaces, 2022.

DOI：10.1021/acsami.2c11960

• molecular design
• heteroaromatic semiconductors
• multilevel resistive memory
• ReRAM
• data storage
• organic electronics

In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of pi-conjugated semiconductors through molecular-shape-engineering is important and highly desirable. Herein, we design a family of N-containing heteroaromatic semiconductors with molecular shapes moving from mono-branched 1Q to di-branched 2Q and tri-branched 3Q. We find that this molecular-shape engineering can induce reliable binary to ternary ReRAM switching, affording a highly enhanced device yield that satisfies the practical requirement. The density functional theory calculation and experimental evidence suggest that the increased multiple paired electroactive nitrogen sites from mono-branched 1Q to tri-branched 3Q are responsible for the multilevel resistance switching, offering stable bidentate coordination with the active metal atoms. This study sheds light on the prospect of N-containing heteroaromatic semiconductors for promising ultrahigh-density data-storage ReRAM application.

• 单位
  江南大学; y