Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency

作者：Sang, Yimeng; Zhuang, Zhe^*; Xing, Kun^*; Jiang, Zhuoying; Li, Chenxue; Xu, Feifan; Zhang, Dongqi; Yu, Junchi; Zhao, Jianguo; Zhi, Ting; Tao, Tao; Li, Cheng; Huang, Kai; Ohkawa, Kazuhiro; Zhang, Rong; Liu, Bin^*

来源：IEEE Electron Device Letters, 2024, 45(1): 76-79.

DOI：10.1109/LED.2023.3335928

• InGaN
• amber micro-light-emitting diode
• Al content in barriers
• wall-plug efficiency

This study demonstrated InGaN-based amber micro-light-emitting diodes (mu LEDs) with varying Al contents of 2%, 5%, and 16% in barriers. The mu LEDs with Al0.05GaN in barriers exhibited the highest on-wafer wall plug efficiency due to the good material quality and optimal energy band engineering for carrier injection. We fabricated mu LEDs with diameters ranging from 60 to 10 mu m using the optimal epi-structure. The forward voltage was 2.15 V at 1 A/cm(2), a significantly lower value compared to others. The external quantum efficiency and wall-plug efficiency of the packaged mu LEDs with a diameter of 10 mu m are 4.8% and 4% at 1 A/cm2, respectively. The slight decrease in efficiency of 10-mu m mu LEDs can be attributed to the side wall effect, which was confirmed by photoluminescent and lifetime mapping.

• 单位
  南京大学; 厦门大学; 南京邮电大学