Monolithically Integrated Active Passive Waveguide Array Fabricated on Thin Film Lithium Niobate Using a Single Continuous Photolithography Process

摘要

This work demonstrates a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of passive/active lithium niobate photonics. The tiled substrates composed of both active and passive areas allow for patterning the mask of the integrated active passive photonic device at once using a single continuous photolithography process. The interface loss of tiled substrate is measured as low as 0.26 dB. Thanks to the stability provided by this approach, a four-channel waveguide amplifier is realized in a straightforward manner, which shows a net gain of 5 dB at a 1550-nm wavelength and 8 dB at a 1530-nm wavelength for each channel. The robust low-loss optical interface for passive/active photonic integration will facilitate large-scale high performance photonic devices that require on-chip light sources and amplifiers.

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