Image-Force-Stabilized Interfacial Dipole Layer Impedes Charge Injection Into Disordered Organic Semiconductors

摘要

We show using three-dimensional kinetic Monte Carlo simulations that the injection of charge carriers from a metallic electrode into a disordered organic semiconductor is under nominally Ohmic injection conditions strongly impeded by the short-range Coulomb interactions between the charge carriers in the image-force-stabilized interfacial dipole layer. In contrast, master equation and conventional onedimensional drift-diffusion simulations underestimate these Coulomb interactions due to their mean-field approximation, and are found not to reveal the effect. The simulations predict a reduction of the current density in organic semiconductor devices when the nominal injection barrier is taken very small or even negative, consistent with recent experimental results [Kotadiya et al., Nat. Mater. 17, 329 (2018)]. However, whereas in that work a modification of the energetic disorder near the interface is assumed, we find that the effect is already obtained after including charge-charge interactions beyond a one-dimensional and mean-field approximation.

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