摘要
Continuous miniaturization of semiconductor devices is the key to boosting modern electronics development. However, this downscaling strategy has been rarely utilized in photoelectronics and photovoltaics. Here, in this work, a full-van der Waals (vdWs) 1D p-Te/2D n-Bi2O2Se heterodiode with a rationally designed nanoscale ultra-photosensitive channel is reported. Enabled by the dangling bond-free mixed-dimensional vdWs integration, the Te/Bi2O2 Se type-II diodes show a high rectification ratio of 3.6 x 10(4). Operating with 100 mV reverse bias or in a self-power mode, the photo-diodes demonstrate excellent photodetection performances, including high responsivities of 130 A W-1 (100 mV bias) and 768.8 mA W-1 (self-power mode), surpassing most of the reports of other heterostructures. More importantly, a superlinear photoelectric conversion phenomenon is uncovered in these nanoscale full-vdWs photodiodes, in which a model based on the in-gap trap-assisted recombination is proposed for this superlinearity. All these results provide valuable insights in light-matter interactions for further performance enhancement of photoelectronic devices.
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