Tailoring the Dimensionality of 2D/3D Heterojunctions for Inverted Perovskite Solar Cells

摘要

Interface engineering is crucial to achieving stable perovskite photovoltaic devices. A versatile approach is developed to tailor interface properties via integrating co-assembled monolayers (co-SAMs) at the p-type buried interface and by capping a two-dimensional (2D) perovskite layer at the n-type upper interface with vacuum quenching. Optimized co-SAMs promote the coverage of the hole transport layer, significantly reducing the incidence of leakage currents. Based on this foundation, we develop damp-heat-stable perovskite solar cells by precisely tailoring the fragments of 2D perovskite layers through vacuum annealing with phenethylammonium iodide. An impressive open-circuit voltage of 1.216 V is achieved, corresponding to 92% of the value determined by the detailed-balance limit, along with a power conversion efficiency of 23.68%. Ultimately, integrating co-SAMs and the vacuum-assisted annealing fabricated devices maintain 96% and 80% of initial efficiencies after 1200 and 500 h of tracking at a maximum power point under 55 and 85(degrees)C, respectively.

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