Optical properties of InGaN-based red multiple quantum wells

作者：Hou, Xin; Fan, Shao-Sheng; Xu, Huan; Iida, Daisuke; Liu, Yue-Jun; Mei, Yang; Weng, Guo-En; Chen, Shao-Qiang; Zhang, Bao-Ping^*; Ohkawa, Kazuhiro

来源：Applied Physics Letters, 2022, 120(26): 261102.

DOI：10.1063/5.0096155

• LIGHT-EMITTING-DIODES
• OUTPUT POWER
• EMISSION
• STRAIN
• WAVELENGTH
• LEDS

In this work, we present the characterization of red InGaN/GaN multiple-quantum-well (MQW) light-emitting diode structures. The optical properties of two MQW structures with different n-GaN underlayer thicknesses (4 and 8 mu m) are studied and compared. The results of photoluminescence studies show that a thicker n-GaN layer is beneficial for obtaining higher In content for red MQWs. However, the sample with a thicker n-GaN layer has a poorer internal quantum efficiency, a larger full width at half maximum, and a shorter nonradiative recombination time, implying that there are stronger In-content fluctuations and more defects. Furthermore, red MQWs with higher In content are shown to exhibit more deep localized states. Our findings imply that in order to achieve high-efficiency InGaN MQWs for red emission, enhancing the uniformity of In-content distribution in the active region and decreasing nonradiative recombination centers are critical challenges.

• 单位
  厦门大学